Here are the parameters of ABB RC-IGCT 3BHB020538R0001:
Main Parameters
- Type：3BHB020538R0001
- Product Category：RC-IGCT (Reverse Conducting Integrated Gate Commutated Thyristor)
- Nominal Voltage：1200V
- Nominal Current：1060A
- Repetitive Peak Reverse Voltage (VRRM)：1400V
- AC Voltage Rating：1800V
- DC Voltage Rating：2400V
- Power Rating：1400kW
- Operating Temperature Range：-40°C to +125°C
- Switching Frequency：Up to 10kHz (depending on application)
- Turn-on Time：Typ. 1.5μs
- Turn-off Time：Typ. 3μs
- Gate Drive Voltage：+15V / -10V
- Gate Drive Power：Max. 5W
- Package Type：Press-pack IGBT module
- Cooling Method：Liquid cooling (recommended)
Additional Specifications
- Short-circuit Current Rating (I²t)：120kA²·s
- Diode Forward Voltage (VF)：≤1.8V at 1060A
- Thyristor Forward Voltage (VTM)：≤2.5V at 1060A
- Insulation Voltage (between terminals and case)：3000V AC (1min)
- Weight：Approx. 1.2kg
- Certifications：Compliant with IEC 60747-9, RoHS
Application Notes
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Suitable for high-power converters in renewable energy systems (e.g., wind turbines, solar inverters), traction drives, and industrial motor drives.
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Requires a dedicated gate driver circuit (e.g., ABB 3HAC series) for optimal performance.
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